公开(公告)号：US09606864B2

公开(公告)日：2017-03-28

申请号：US13947219

申请日：2013-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Yeon Lee ,  Hee-Woong Kang ,  Jong-Nam Baek ,  San Song

IPC: G11C29/00 ,  G06F11/10 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34

CPC classification number: G06F11/1068 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3431

Abstract: A nonvolatile memory device includes a memory cell array including a selected page including multiple error correction code (ECC) units, and a voltage generation unit configured to generate a read voltage to read data from the selected page. Read voltage levels are set individually for the respective ECC units according to data detection results for each of the ECC units. During a read retry section performed with respect to selected ECC units of the selected page for which read errors have been detected, a re-read operation of the selected ECC units is performed according to the respective read voltage levels set for the selected ECC units.