Invention Grant
- Patent Title: Semiconductor device and heat-dissipating mechanism
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Application No.: US14778684Application Date: 2014-03-03
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Publication No.: US09607922B2Publication Date: 2017-03-28
- Inventor: Kenji Matsuda , Dai Shinozaki , Yuichi Makita , Hitoshi Kubo , Yusuke Ohshima , Hidekazu Matsuda , Junichi Taniuchi
- Applicant: Tanaka Kikinzoku Kogyo K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Orrick Herrington & Sutcliffe, LLP
- Priority: JP2013-063939 20130326
- International Application: PCT/JP2014/001441 WO 20140303
- International Announcement: WO2014/156025 WO 20141002
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/367 ; H01L23/00 ; H01L23/373 ; H01L23/36 ; H05K7/20

Abstract:
A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.
Public/Granted literature
- US20160049350A1 SEMICONDUCTOR DEVICE AND HEAT-DISSIPATING MECHANISM Public/Granted day:2016-02-18
Information query
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