公开(公告)号：US09607922B2

公开(公告)日：2017-03-28

申请号：US14778684

申请日：2014-03-03

申请人： Tanaka Kikinzoku Kogyo K.K.

发明人： Kenji Matsuda ,  Dai Shinozaki ,  Yuichi Makita ,  Hitoshi Kubo ,  Yusuke Ohshima ,  Hidekazu Matsuda ,  Junichi Taniuchi

IPC分类号： H01L23/34 ,  H01L23/367 ,  H01L23/00 ,  H01L23/373 ,  H01L23/36 ,  H05K7/20

CPC分类号： H01L23/367 ,  H01L23/34 ,  H01L23/36 ,  H01L23/373 ,  H01L23/3736 ,  H01L24/01 ,  H01L2924/0002 ,  H05K7/20409 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.