Invention Grant
- Patent Title: Off-center gate cut
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Application No.: US14611090Application Date: 2015-01-30
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Publication No.: US09607988B2Publication Date: 2017-03-28
- Inventor: Yanxiang Liu , Stanley Seungchul Song
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/092 ; H01L27/02 ; H01L21/8238 ; H01L29/08
Abstract:
A semiconductor device includes a diffusion area, a gate structure coupled to the diffusion area, and a dummy gate structure coupled to the diffusion area. The gate structure extends a first distance beyond the diffusion area, and the dummy gate structure extends a second distance beyond the diffusion area.
Public/Granted literature
- US20160225767A1 OFF-CENTER GATE CUT Public/Granted day:2016-08-04
Information query
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