Invention Grant
- Patent Title: Method for fabricating semiconductor device having fin structure that includes dummy fins
-
Application No.: US15170904Application Date: 2016-06-01
-
Publication No.: US09608090B2Publication Date: 2017-03-28
- Inventor: En-Chiuan Liou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103142048A 20141203
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L29/417 ; H01L21/285 ; H01L29/165 ; H01L29/267 ; H01L29/161 ; H01L29/24
Abstract:
A method for fabricating semiconductor device is disclosed. First, a substrate, and a sacrificial mandrel is formed on the substrate, in which the sacrificial mandrel includes a first side and a second side with the indentation. Next, a spacer is formed adjacent to the first side and the second side of the sacrificial mandrel, the sacrificial mandrel is removed, and the spacer is used to remove part of the substrate for forming a fin-shaped structure and a dummy fin-shaped structure.
Public/Granted literature
- US20160276458A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE THAT INCLUDES DUMMY FINS Public/Granted day:2016-09-22
Information query
IPC分类:
