发明授权
- 专利标题: Target shaping
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申请号: US13032922申请日: 2011-02-23
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公开(公告)号: US09611537B2公开(公告)日: 2017-04-04
- 发明人: Stanislav Kadlec , Jürgen Weichart
- 申请人: Stanislav Kadlec , Jürgen Weichart
- 申请人地址: CH Trubbach
- 专利权人: EVATEC AG
- 当前专利权人: EVATEC AG
- 当前专利权人地址: CH Trubbach
- 代理机构: Pearne & Gordon LLP
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/34
摘要:
A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.
公开/授权文献
- US20110203920A1 TARGET SHAPING 公开/授权日:2011-08-25
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