公开(公告)号：US09355824B2

公开(公告)日：2016-05-31

申请号：US11954507

申请日：2007-12-12

申请人： Stanislav Kadlec ,  Jürgen Weichart

发明人： Stanislav Kadlec ,  Jürgen Weichart

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/34

CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

摘要翻译： 提供了一种用于产生靶的溅射以在基底上产生涂层的装置。 该装置包括包括阴极和阳极的磁控管。 电源可操作地连接到磁控管，并且至少一个电容器可操作地连接到电源。 该装置还包括可操作地连接到至少一个电容器的电感。 还提供第一开关和第二开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 第二开关可操作地连接以放电磁控管。 第二开关被配置为根据第二脉冲放电磁控管。

公开(公告)号：US09611537B2

公开(公告)日：2017-04-04

申请号：US13032922

申请日：2011-02-23

申请人： Stanislav Kadlec ,  Jürgen Weichart

发明人： Stanislav Kadlec ,  Jürgen Weichart

IPC分类号： C23C14/00 ,  C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423

摘要： A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

公开(公告)号：US09587306B2

公开(公告)日：2017-03-07

申请号：US11968300

申请日：2008-01-02

申请人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jürgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

发明人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jürgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

IPC分类号： C23C14/34 ,  G11B5/851 ,  H01J37/34

CPC分类号： C23C14/34 ,  G11B5/851 ,  H01J37/34 ,  H01J37/3447

摘要： For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions whose projections onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

摘要翻译： 为了产生例如具有恒定标称方向性的定向层，例如具有优选磁化方向的低保持层或用于通过阴极溅射在衬底表面（4）上的这种层的支撑层，涂覆过程发生在 一种从目标表面（6）发出的颗粒主要从其上突出到基板表面（4）上的方向处于围绕标称方向的优选角度范围内的方式。 这例如通过定位准直器（8）来实现，该准直器（8）围绕与基板表面（4）平行于基板表面（4）的标称方向的法向角度延伸的板（9），但代替 或者除了这样的定位之外，还可以适当地调整或控制衬底表面（4）相对于目标表面（6）的位置或移动。

公开(公告)号：US08435389B2

公开(公告)日：2013-05-07

申请号：US11954490

申请日：2007-12-12

申请人： Stanislav Kadlec ,  Jürgen Weichart

发明人： Stanislav Kadlec ,  Jürgen Weichart

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

摘要翻译： 提供了一种用于产生靶的溅射以在磁控管的阴极上的电流密度在0.1至10A / cm 2之间的衬底上产生涂层的设备。 该装置包括可操作地连接到磁控管的电源，并且至少一个电容器可操作地连接到电源。 还提供第一开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 电偏置装置可操作地连接到衬底并且被配置为施加衬底偏置。

公开(公告)号：US20110203920A1

公开(公告)日：2011-08-25

申请号：US13032922

申请日：2011-02-23

申请人： Stanislav Kadlec ,  Jürgen Weichart

发明人： Stanislav Kadlec ,  Jürgen Weichart

IPC分类号： C23C14/35 ,  C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423

摘要： A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

摘要翻译： 物理气相沉积系统的靶包括顶部，底部和底部。 基体基本上由要溅射的靶的表面限定。 第一内环和第二外环从基座延伸。 每个环具有内侧和外侧，其中溅射通过与靶相邻的磁体排列集中在外侧上。

公开(公告)号：US07476301B2

公开(公告)日：2009-01-13

申请号：US10256718

申请日：2002-09-27

申请人： Jürgen Weichart ,  Dominik Wimo Amman ,  Siegfried Krassnitzer

发明人： Jürgen Weichart ,  Dominik Wimo Amman ,  Siegfried Krassnitzer

IPC分类号： C23C14/00

CPC分类号： H01J37/32174 ,  H01J37/321 ,  H01J37/3266

摘要： The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

公开(公告)号：US09490166B2

公开(公告)日：2016-11-08

申请号：US13822125

申请日：2011-12-07

申请人： Sven Uwe Rieschl ,  Mohamed Elghazzali ,  Jürgen Weichart

发明人： Sven Uwe Rieschl ,  Mohamed Elghazzali ,  Jürgen Weichart

IPC分类号： H01L21/768 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/285

CPC分类号： H01L21/68785 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32715 ,  H01J37/347 ,  H01J37/3488 ,  H01L21/2855 ,  H01L21/67253 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76879

摘要： Apparatus (1, 26) for depositing a layer (37, 38, 39) on a substrate (2) in a process gas comprises a chuck (3) comprising a first surface (4) for supporting the substrate (2), a clamp (4) for securing the substrate (2) to the first surface (14) of the chuck (3), an evacuatable enclosure (5) enclosing the chuck (3) and the clamp (4) and comprising an inlet, through which the processing gas is insertable into the enclosure (5), and control apparatus (19). The control apparatus (19) is adapted to move at least one of the chuck (3) and the clamp (4) relative to, and independently of, one another to adjust a spacing between the chuck (3) and the clamp (4) during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure (5) that is less than atmospheric pressure.

摘要翻译： 用于在工艺气体中在衬底（2）上沉积层（37,38,39）的装置（1，26）包括夹头（3），其包括用于支撑衬底（2）的第一表面（4） （4），用于将基板（2）固定到卡盘（3）的第一表面（14），包围卡盘（3）和夹具（4）的可抽空外壳（5），并且包括入口， 处理气体可插入外壳（5）和控制装置（19）中。 控制装置（19）适于相对于彼此相互独立地移动卡盘（3）和夹具（4）中的至少一个，以调节卡盘（3）和夹具（4）之间的间隔， 在单个沉积过程中同时保持处理气体的流动和小于大气压力的外壳（5）内的压力。

公开(公告)号：US20130288477A1

公开(公告)日：2013-10-31

申请号：US13822125

申请日：2011-12-07

申请人： Sven Uwe Rieschl ,  Mohamed Elghazzali ,  Jürgen Weichart

发明人： Sven Uwe Rieschl ,  Mohamed Elghazzali ,  Jürgen Weichart

IPC分类号： H01L21/768 ,  H01L21/687

CPC分类号： H01L21/68785 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32715 ,  H01J37/347 ,  H01J37/3488 ,  H01L21/2855 ,  H01L21/67253 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76879

摘要： Apparatus (1, 26) for depositing a layer (37, 38, 39) on a substrate (2) in a process gas comprises a chuck (3) comprising a first surface (4) for supporting the substrate (2), a clamp (4) for securing the substrate (2) to the first surface (14) of the chuck (3), an evacuatable enclosure (5) enclosing the chuck (3) and the clamp (4) and comprising an inlet, through which the processing gas is insertable into the enclosure (5), and control apparatus (19). The control apparatus (19) is adapted to move at least one of the chuck (3) and the clamp (4) relative to, and independently of, one another to adjust a spacing between the chuck (3) and the clamp (4) during a single deposition process whilst maintaining a flow of the processing gas and a pressure within the enclosure (5) that is less than atmospheric pressure.

摘要翻译： 用于在工艺气体中在衬底（2）上沉积层（37,38,39）的装置（1，26）包括夹头（3），其包括用于支撑衬底（2）的第一表面（4） （4），用于将基板（2）固定到卡盘（3）的第一表面（14），包围卡盘（3）和夹具（4）的可抽空外壳（5），并且包括入口， 处理气体可插入外壳（5）和控制装置（19）中。 控制装置（19）适于相对于彼此相互独立地移动卡盘（3）和夹具（4）中的至少一个，以调节卡盘（3）和夹具（4）之间的间隔， 在单一沉积过程中同时保持处理气体的流动和小于大气压力的外壳（5）内的压力。

公开(公告)号：US20100155238A1

公开(公告)日：2010-06-24

申请号：US12644596

申请日：2009-12-22

申请人： Jürgen Weichart ,  Heinz Felzer

发明人： Jürgen Weichart ,  Heinz Felzer

IPC分类号： C23C14/35 ,  C23C14/34

CPC分类号： H01J37/34 ,  H01J37/32541 ,  H01J37/3408 ,  H01J37/3438

摘要： Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.

摘要翻译： 用于溅射的装置包括真空室，具有布置在真空室中的第一表面的至少一个第一电极，具有布置在真空室中的表面的对电极和RF发生器。 RF发生器被配置为在所述至少一个第一电极和对电极之间施加RF电场，以点燃第一电极和对电极之间的等离子体。 对电极包括与真空室连通的至少两个空腔。 空腔各自具有这样的尺寸，使得能够在空腔中形成等离子体。

公开(公告)号：US08613828B2

公开(公告)日：2013-12-24

申请号：US12315608

申请日：2008-12-04

申请人： Jürgen Weichart ,  Dominik Wimo Amman ,  Siegfried Krassnitzer

发明人： Jürgen Weichart ,  Dominik Wimo Amman ,  Siegfried Krassnitzer

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/321 ,  H01J37/3266

摘要： The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.