Invention Grant
- Patent Title: Methods of forming a tri-gate FinFET device
-
Application No.: US14525288Application Date: 2014-10-28
-
Publication No.: US09614056B2Publication Date: 2017-04-04
- Inventor: Ruilong Xie , Andreas Knorr
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L29/78 ; H01L27/12 ; H01L21/84 ; H01L21/8234 ; H01L27/11 ; H01L21/8238

Abstract:
One illustrative method disclosed herein includes, among other things, forming a fin that is positioned above and vertically spaced apart from an upper surface of a semiconductor substrate, the fin having an upper surface, a lower surface and first and second side surfaces, wherein an axis of the fin in a height direction of the fin is oriented substantially parallel to the upper surface of the substrate, and wherein a first side surface of the fin contacts a first insulating material, forming a gate structure around the upper surface, the second side surface and the lower surface of the fin, and forming a gate contact structure that is conductively coupled to the gate structure.
Public/Granted literature
- US20160118480A1 METHODS OF FORMING A TRI-GATE FINFET DEVICE AND THE RESULTING DEVICE Public/Granted day:2016-04-28
Information query
IPC分类: