- 专利标题： Semiconductor device and method of manufacturing the semiconductor device
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申请号： US14984284申请日： 2015-12-30
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公开(公告)号： US09614090B2公开(公告)日： 2017-04-04
- 发明人: Ju-youn Kim , Sang-jung Kang , Ji-hwan An
- 申请人： Ju-youn Kim , Sang-jung Kang , Ji-hwan An
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0036761 20150317
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/423
摘要：
A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.
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