公开(公告)号：US09614090B2

公开(公告)日：2017-04-04

申请号：US14984284

申请日：2015-12-30

申请人： Ju-youn Kim ,  Sang-jung Kang ,  Ji-hwan An

发明人： Ju-youn Kim ,  Sang-jung Kang ,  Ji-hwan An

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856

摘要： A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.