- 专利标题: Photo mixer and method for manufacturing same
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申请号: US14430182申请日: 2013-09-17
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公开(公告)号: US09618823B2公开(公告)日: 2017-04-11
- 发明人: Kyung-Hyun Park , Nam-Je Kim , Hyun-Sung Ko , Dong-Hun Lee , Sang-Pil Han , Han-Cheol Ryu , Jeong-Woo Park , Ki-Won Moon , Dae-Yong Kim
- 申请人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2012-0105354 20120921; KR10-2013-0032972 20130327
- 国际申请: PCT/KR2013/008415 WO 20130917
- 国际公布: WO2014/046465 WO 20140327
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; G02F1/35 ; H01L31/0216 ; H01L31/0304 ; H01L31/14 ; H01L31/18
摘要:
Disclosed herein is a photomixer and method of manufacturing the photomixer which can fundamentally solve the existing restrictive factors of a PCA and a photomixer which are core parts of a conventional broadband terahertz spectroscopy system. The presented photomixer includes an active layer formed on a top surface of a substrate, the active layer being formed on an area on which light is incident, and a thermal conductive layer formed on the top surface of the substrate, the thermal conductive layer being formed on an area other than the area on which light is incident. The active layer is formed to have a mesa cross section, and the thermal conductive layer is regrown on an area other than the area on which light is incident using an MOCVD method, and has a flattened surface.
公开/授权文献
- US20150277208A1 PHOTO MIXER AND METHOD FOR MANUFACTURING SAME 公开/授权日:2015-10-01
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