Invention Grant
- Patent Title: Apparatus for and method of crystallizing active layer of thin film transistor
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Application No.: US14600113Application Date: 2015-01-20
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Publication No.: US09620361B2Publication Date: 2017-04-11
- Inventor: Byoung-Kwon Choo , Sang-Hoon Ahn , Byoung-Ho Cheong , Joo-Woan Cho , Hyun-Jin Cho , Soo-Yeon Han
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse P.C.
- Priority: KR10-2014-0065337 20140529
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/146

Abstract:
An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.
Public/Granted literature
- US20150348782A1 APPARATUS FOR AND METHOD OF CRYSTALLIZING ACTIVE LAYER OF THIN FILM TRANSISTOR Public/Granted day:2015-12-03
Information query
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