公开(公告)号：US09620361B2

公开(公告)日：2017-04-11

申请号：US14600113

申请日：2015-01-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Kwon Choo ,  Sang-Hoon Ahn ,  Byoung-Ho Cheong ,  Joo-Woan Cho ,  Hyun-Jin Cho ,  Soo-Yeon Han

IPC: H01L21/02 ,  H01L27/146

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/14698

Abstract: An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.