- 专利标题： Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate
-
申请号： US14765875申请日： 2014-02-13
-
公开(公告)号： US09620374B2公开(公告)日： 2017-04-11
- 发明人: Takanori Kido , Tomohisa Kato
- 申请人： SHOWA DENKO K.K.
- 申请人地址： JP Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2013-026081 20130213
- 国际申请： PCT/JP2014/053379 WO 20140213
- 国际公布： WO2014/126174 WO 20140821
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/306 ; H01L21/321 ; H01L21/02 ; C30B29/36 ; C30B33/00 ; H01L29/16 ; B24B37/24
摘要：
A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
公开/授权文献
信息查询
IPC分类:
