Invention Grant
- Patent Title: Semiconductor device including light-emitting element
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Application No.: US14709929Application Date: 2015-05-12
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Publication No.: US09620573B2Publication Date: 2017-04-11
- Inventor: Masaya Kadono , Shunpei Yamazaki , Yukio Yamauchi , Hidehito Kitakado
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-084989 19990326
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12 ; H01L29/66 ; H01L29/786 ; H01L51/52 ; H01L23/10
Abstract:
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
Public/Granted literature
- US20150255524A1 Semiconductor Device and a Method of Manufacturing the Same Public/Granted day:2015-09-10
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