公开(公告)号：US09837451B2

公开(公告)日：2017-12-05

申请号：US15072546

申请日：2016-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukio Yamauchi ,  Takeshi Fukunaga

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L27/13

CPC classification number: H01L27/1255 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/13 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2251/5315

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

公开(公告)号：US09620573B2

公开(公告)日：2017-04-11

申请号：US14709929

申请日：2015-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L51/52 ,  H01L23/10

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

公开(公告)号：US09105523B2

公开(公告)日：2015-08-11

申请号：US14230202

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L23/22 ,  H01L23/24 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L23/10

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US20140209916A1

公开(公告)日：2014-07-31

申请号：US14230202

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US09659524B2

公开(公告)日：2017-05-23

申请号：US14571897

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukio Yamauchi ,  Takeshi Fukunaga

IPC: G09G3/32 ,  G09G3/3225 ,  G09G3/3258 ,  H01L27/12 ,  H01L27/15 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/786 ,  H01L33/62 ,  G09G3/30 ,  G09G3/20 ,  H01L51/52

CPC classification number: G09G3/3225 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3258 ,  G09G2300/023 ,  G09G2300/04 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0842 ,  H01L27/1277 ,  H01L27/1296 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/62 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

公开(公告)号：US09293483B2

公开(公告)日：2016-03-22

申请号：US14645021

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukio Yamauchi ,  Takeshi Fukunaga

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32 ,  H01L27/13

CPC classification number: H01L27/1255 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/13 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2251/5315

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

公开(公告)号：US20150255524A1

公开(公告)日：2015-09-10

申请号：US14709929

申请日：2015-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US08941565B2

公开(公告)日：2015-01-27

申请号：US14456294

申请日：2014-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukio Yamauchi ,  Takeshi Fukunaga

IPC: G09G3/30

CPC classification number: G09G3/3225 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3258 ,  G09G2300/023 ,  G09G2300/04 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0842 ,  H01L27/1277 ,  H01L27/1296 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/62 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

公开(公告)号：US09876033B2

公开(公告)日：2018-01-23

申请号：US15480934

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

公开(公告)号：US08830146B2

公开(公告)日：2014-09-09

申请号：US14031088

申请日：2013-09-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukio Yamauchi ,  Takeshi Fukunaga

IPC: G09G3/30

CPC classification number: G09G3/3225 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3258 ,  G09G2300/023 ,  G09G2300/04 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0842 ,  H01L27/1277 ,  H01L27/1296 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/62 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

Abstract translation: 提供能够进行清晰的多灰度级彩色显示的EL显示装置和设置有EL显示装置的电子设备，其中根据其中EL元件的发光和非发光的时分驱动方法进行灰度显示 设置在像素（104）中的（109）由时间控制，并且防止了电流控制TFT（108）的特性变化的影响。 当使用该方法时，数据信号侧驱动电路（102）和栅极信号侧驱动电路（103）由具有特殊晶体结构的硅膜和显示极高运算速度的TFT形成。