公开(公告)号：US20150255524A1

公开(公告)日：2015-09-10

申请号：US14709929

申请日：2015-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US09876033B2

公开(公告)日：2018-01-23

申请号：US15480934

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

公开(公告)号：US09620573B2

公开(公告)日：2017-04-11

申请号：US14709929

申请日：2015-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L51/52 ,  H01L23/10

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

公开(公告)号：US09105523B2

公开(公告)日：2015-08-11

申请号：US14230202

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L23/22 ,  H01L23/24 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L23/10

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US20140209916A1

公开(公告)日：2014-07-31

申请号：US14230202

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei Yamazaki ,  Yukio Yamauchi ,  Hidehito Kitakado

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract translation: 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。

公开(公告)号：US20170213853A1

公开(公告)日：2017-07-27

申请号：US15480934

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei YAMAZAKI ,  Yukio YAMAUCHI ,  Hidehito KITAKADO

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.