Invention Grant
- Patent Title: Semiconductor device with a P-N junction for reduced charge leakage and method of manufacturing the same
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Application No.: US14694325Application Date: 2015-04-23
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Publication No.: US09620603B2Publication Date: 2017-04-11
- Inventor: Shaw-Hung Ku , Chih-Hsiung Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsin-chu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Alston & Bird LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/423 ; H01L21/28 ; H01L29/49
Abstract:
Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the formation of a p-n junction in a conductive layer. The method may allow for the production of semiconductor memory devices of reduced size.
Public/Granted literature
- US20160315161A1 SEMICONDUCTOR DEVICE WITH A P-N JUNCTION FOR REDUCED CHARGE LEAKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-10-27
Information query
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