- 专利标题： Memory device having RRAM-based non-volatile storage array and repair function
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申请号： US14842815申请日： 2015-09-01
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公开(公告)号： US09627093B2公开(公告)日： 2017-04-18
- 发明人: Wen-Ting Chu , Yue-Der Chih
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C29/00 ; G11C29/02 ; G11C13/00 ; G11C29/44
摘要：
A device includes a storage region, and a resistive-read-access-memory-based (RRAM-based or ReRAM-based) non-volatile storage array is disclosed herein. The storage region includes a first storage array and a second storage array. The first storage array includes a plurality of first storage cells. The second storage array includes a plurality of second storage cells. The second storage cells are configured to be in place of the first storage cells. The RRAM-based non-volatile storage array is configured to record at least one corresponding relationship between the first storage cells and the second storage cells.
公开/授权文献
- US20150371721A1 MEMORY DEVICE 公开/授权日：2015-12-24
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