- 专利标题： Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems
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申请号： US14725997申请日： 2015-05-29
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公开(公告)号： US09627239B2公开(公告)日： 2017-04-18
- 发明人: Daewon Kwon
- 申请人： Veeco Instruments, Inc.
- 申请人地址： US NY Plainview
- 专利权人： Veeco Instruments Inc.
- 当前专利权人： Veeco Instruments Inc.
- 当前专利权人地址： US NY Plainview
- 代理机构： Patterson Thuente Pedersen, P.A.
- 主分类号： G01N21/956
- IPC分类号： G01N21/956 ; H04N5/225 ; H01L21/67 ; G01B11/06 ; G01B11/00 ; C23C16/458 ; C23C16/52
摘要：
The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.
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