Invention Grant
- Patent Title: Semiconductor device allowing metal layer routing formed directly under metal pad
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Application No.: US15250888Application Date: 2016-08-29
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Publication No.: US09627336B2Publication Date: 2017-04-18
- Inventor: Chun-Liang Chen , Tien-Chang Chang , Chien-Chih Lin
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00 ; H01L23/522 ; H01L23/528 ; H01L27/088
Abstract:
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing and a second specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing and the second specific metal layer routing are formed in a second metal layer of the semiconductor device, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad.
Public/Granted literature
- US20160372431A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-22
Information query
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