An ESD protection device for shunting an electrostatic discharge current from a first node to a second node, and an integrated circuit including the same. The device includes a first bipolar transistor having a collector and an emitter located in a first n-type region. The emitter of the first transistor is connected to the first node. The device also includes a second bipolar transistor having a collector and an emitter located in a second n-type region. The emitter of the second transistor is connected to the collector of the first bipolar transistor. The device further includes a pn junction diode including a p-type region located in a third n-type region. The p-type region of the diode is connected to the collector of the second bipolar transistor and the third n-type region is connected to the second node.