- 专利标题： Forming reliable contacts on tight semiconductor pitch
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申请号： US15181992申请日： 2016-06-14
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公开(公告)号： US09634004B2公开(公告)日： 2017-04-25
- 发明人: Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz , Ruilong Xie , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/088 ; H01L29/06 ; H01L23/31 ; H01L29/08 ; H01L29/417 ; H01L21/8234
摘要：
Semiconductor devices include a passivating layer over a pair of fins. A barrier extends through the passivating layer and between the pair of fins and that electrically isolates the fins. Electrical contacts are formed through the passivating layer to the fins. The electrical contacts directly contact sidewalls of the barrier.
公开/授权文献
- US20170069627A1 FORMING RELIABLE CONTACTS ON TIGHT SEMICONDUCTOR PITCH 公开/授权日：2017-03-09
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