Invention Grant
- Patent Title: Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
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Application No.: US14581361Application Date: 2014-12-23
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Publication No.: US09634237B2Publication Date: 2017-04-25
- Inventor: Kangho Lee , Jimmy Kan , Xiaochun Zhu , Matthias Georg Gottwald , Chando Park , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01F10/32
Abstract:
A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.
Public/Granted literature
- US20160181508A1 ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELING JUNCTION DEVICES Public/Granted day:2016-06-23
Information query
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