Invention Grant
- Patent Title: Method and system for providing magnetic junctions including Heusler multilayers
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Application No.: US14809113Application Date: 2015-07-24
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Publication No.: US09634241B2Publication Date: 2017-04-25
- Inventor: William H. Butler , Kamaram Munira , Roman Chepulskyy , Dmytro Apalkov
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10

Abstract:
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Public/Granted literature
- US20160043301A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLER MULTILAYERS Public/Granted day:2016-02-11
Information query
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