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公开(公告)号：US20180108833A1
公开(公告)日：2018-04-19
申请号：US15373396
申请日：2016-12-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Roman Chepulskyy , Dmytro Apalkov
CPC classification number: H01L43/08 , G11C11/161 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a free layer, providing a pinned layer and providing a nonmagnetic spacer between the free and pinned layers. The free layer is switchable between stable magnetic states using a write current passed through the magnetic junction. At least one of the step of providing the free layer and the step of providing the pinned layer includes depositing a magnetic layer; depositing an adsorber layer on the magnetic layer and performing at least one anneal. The magnetic layer is amorphous as-deposited and includes an interstitial glass-promoting component. The adsorber layer attracts the interstitial glass-promoting component and has a lattice mismatch with the nonmagnetic spacer layer of not more than ten percent. Each of the anneal(s) is at a temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius.
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2.发明授权Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统公开(公告)号：US09478730B2
公开(公告)日：2016-10-25
申请号：US13865445
申请日：2013-04-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Roman Chepulskyy , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy
CPC classification number: H01L43/08 , G11C11/161
Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.
Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 被钉扎层和自由层中的至少一个包括磁性子结构。 磁性子结构包括与至少一个插入层交错的至少两个磁性层。 所述至少一个插入层中的至少一个包含Bi，W，I，Zn，Nb，Ag，Cd，Hf，Os，Mo，Ca，Hg，Sc，Y，Sr，Mg，Ti，Ba，K ，Na，Rb，Pb和Zr。 至少两个磁性层磁耦合。
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3.发明授权Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications 有权用于通过离子扩散控制磁性能的方法，可用于自旋转移磁力随机存取存储器应用中的磁结公开(公告)号：US09287322B2
公开(公告)日：2016-03-15
申请号：US14704341
申请日：2015-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Roman Chepulskyy , Dmytro Apalkov
CPC classification number: H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括提供参考层，非磁性间隔层和自由层。 非磁性间隔层位于游离层和参考层之间。 接口位于非磁性间隔物和自由层之间。 提供自由层还包括施加至少一个电场，同时自由层处于高于磁结的操作温度的局部温度。 电场在离开自由层和非磁性间隔层之间的界面的方向上对自由层中的阴离子施加力。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。
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4.发明申请METHOD AND SYSTEM FOR PROVIDING THERMALLY ASSISTED MAGNETIC JUNCTIONS HAVING A MULTI-PHASE OPERATION 有权用于提供具有多相操作的热辅助磁轭的方法和系统公开(公告)号：US20150294707A1
公开(公告)日：2015-10-15
申请号：US14563307
申请日：2014-12-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Dmytro Apalkov , Roman Chepulskyy
CPC classification number: G11C11/1675 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer has a magnetic thermal stability coefficient having a plurality of magnetic thermal stability coefficient phases. A first phase magnetic thermal stability coefficient has a first slope below a first temperature. A second phase magnetic thermal stability coefficient has a second slope above the first temperature and below a second temperature greater than the first temperature. The first and second slopes are unequal at the first temperature. The magnetic thermal stability coefficient is zero only above the second temperature. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层具有具有多个磁热稳定系数相的磁热稳定系数。 第一相磁性热稳定系数具有低于第一温度的第一斜率。 第二相磁性热稳定系数具有高于第一温度的第二斜率，并且低于大于第一温度的第二温度。 第一和第二斜坡在第一个温度下不相等。 磁热稳定系数仅在第二温度以上为零。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。
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公开(公告)号：US12114578B2
公开(公告)日：2024-10-08
申请号：US17675876
申请日：2022-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Roman Chepulskyy , Dmytro Apalkov
Abstract: A magnetoresistive tunnel-junction (MTJ) memory element includes a magnetic reference layer (RL), a magnetic free layer (FL), a tunneling barrier layer, which extends between the magnetic RL and the magnetic FL, and a diffusion-blocking layer (DBL), which extends on the magnetic FL. The includes at least one material selected from a group consisting of bismuth (Bi), antimony (Sb), osmium (Os), rhenium (Re), tin (Sn), rhodium (Rh), indium (In), and cadmium (Cd). An oxide capping layer is also provided on the DBL. The oxide layer may include at least one of strontium (Sr), scandium (Sc), beryllium (Be), calcium (Ca), yttrium (Y), zirconium (Zr), and hafnium (Hf).
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Patent Agency Ranking
公开(公告)号：US11348627B2
公开(公告)日：2022-05-31
申请号：US17127732
申请日：2020-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Sungchul Lee , Roman Chepulskyy
Abstract: A system including a racetrack memory layer is described. The racetrack memory layer includes a plurality of bit locations and a plurality of domain wall traps. The bit locations are interleaved with the domain wall traps. Each of the bit locations has a first domain wall speed. Each of the domain wall traps has a second domain wall speed. The first domain wall speed is greater than the second domain wall speed. The first domain wall speed and the second domain wall speed are due to at least one of a Dzyaloshinskii-Moriya interaction variation in the racetrack memory layer, a synthetic antiferromagnetic effect variation in the racetrack memory layer, and a separation distance for the plurality of domain wall traps corresponding to an intrinsic travel distance. The separation distance is less than one hundred nanometers.
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公开(公告)号：US20180102476A1
公开(公告)日：2018-04-12
申请号：US15367033
申请日：2016-12-01
Applicant: Samsung Electronics Co., LTD.
Inventor： Roman Chepulskyy , Dmytro Apalkov
CPC classification number: H01L43/10 , G11C11/161 , G11C11/165 , H01L27/226 , H01L43/08 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer having an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy greater than the out-of-plane demagnetization energy. The diluted magnetic layer includes at least one magnetic material and at least one nonmagnetic material. The diluted magnetic layer has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s).
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8.发明授权Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer 有权用于提供包括Heusler层和非晶体插入层的工程磁性层的方法和系统公开(公告)号：US09236564B2
公开(公告)日：2016-01-12
申请号：US14478963
申请日：2014-09-05
Applicant: Samsung Electronics Co., LTD.
Inventor： Matthew J. Carey , Keith Chan , Roman Chepulskyy
CPC classification number: H01L43/12 , G11B5/3909 , G11B2005/3996 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。
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9.发明申请METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN A MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权用于通过旋转传递扭矩磁性随机存取存储器应用中的磁性接头中的离子扩散来控制磁性的方法公开(公告)号：US20150325623A1
公开(公告)日：2015-11-12
申请号：US14704341
申请日：2015-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Roman Chepulskyy , Dmytro Apalkov
CPC classification number: H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括提供参考层，非磁性间隔层和自由层。 非磁性间隔层位于游离层和参考层之间。 接口位于非磁性间隔物和自由层之间。 提供自由层还包括施加至少一个电场，同时自由层处于高于磁结的操作温度的局部温度。 电场在离开自由层和非磁性间隔层之间的界面的方向上对自由层中的阴离子施加力。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。
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公开(公告)号：US10121961B2
公开(公告)日：2018-11-06
申请号：US15479653
申请日：2017-04-05
Applicant: Samsung Electronics Co., LTD.
Inventor： Dmytro Apalkov , Xueti Tang , Hong-Sik Jung , Roman Chepulskyy
Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.
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