- 专利标题： Conformal doping in 3D si structure using conformal dopant deposition
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申请号： US14961920申请日： 2015-12-08
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公开(公告)号： US09640400B1公开(公告)日： 2017-05-02
- 发明人: Rui Cheng , Abhijit Basu Mallick , Srinivas Gandikota , Pramit Manna
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/225 ; H01L29/66 ; H01L21/324 ; H01L21/02 ; H01L29/167
摘要：
Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.
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