Invention Grant
- Patent Title: Conformal doping in 3D si structure using conformal dopant deposition
-
Application No.: US14961920Application Date: 2015-12-08
-
Publication No.: US09640400B1Publication Date: 2017-05-02
- Inventor: Rui Cheng , Abhijit Basu Mallick , Srinivas Gandikota , Pramit Manna
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/225 ; H01L29/66 ; H01L21/324 ; H01L21/02 ; H01L29/167
Abstract:
Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.
Public/Granted literature
- US20170110321A1 CONFORMAL DOPING IN 3D SI STRUCTURE USING CONFORMAL DOPANT DEPOSITION Public/Granted day:2017-04-20
Information query
IPC分类:
