Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US14762607Application Date: 2013-01-24
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Publication No.: US09640655B2Publication Date: 2017-05-02
- Inventor: Shinya Nishimura , Narumasa Soejima , Kensaku Yamamoto
- Applicant: Shinya Nishimura , Narumasa Soejima , Kensaku Yamamoto
- Applicant Address: JP Toyota JP Kariya
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Toyota JP Kariya
- Agency: Oliff PLC
- International Application: PCT/JP2013/051443 WO 20130124
- International Announcement: WO2014/115280 WO 20140731
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L21/311 ; H01L21/306 ; H01L21/225 ; H01L21/31 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L21/265 ; H01L21/28
Abstract:
A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.
Public/Granted literature
- US20160005861A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
Information query
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