Invention Grant
- Patent Title: High-speed germanium PIN photodiode
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Application No.: US15134784Application Date: 2016-04-21
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Publication No.: US09640702B2Publication Date: 2017-05-02
- Inventor: Dieter Knoll , Stefan Lischke
- Applicant: IHP GmbH-Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik
- Applicant Address: DE Frankfurt
- Assignee: IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ—INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
- Current Assignee: IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ—INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
- Current Assignee Address: DE Frankfurt
- Agency: Ware, Fressola, Maguire & Barber LLP
- Priority: DE102015207618 20150424; DE102015212208 20150630
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/105 ; G02B6/42 ; H01L31/0232 ; H01L31/0288
Abstract:
A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.
Public/Granted literature
- US20170025562A1 HIGH-SPEED GERMANIUM PIN PHOTODIODE Public/Granted day:2017-01-26
Information query
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