Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (XyH3-ySi)zCH4-z, (XyH3-ySi)(CH2)(SiXpH2-p)(CH2)(SiXyH3-y), or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.