Invention Grant
- Patent Title: Material test structure
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Application No.: US14596406Application Date: 2015-01-14
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Publication No.: US09645102B2Publication Date: 2017-05-09
- Inventor: Fabio Pellizzer , Innocenzo Tortorelli , Christina Papagianni , Gianpaolo Spadini , Jong Won Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G01N27/04
- IPC: G01N27/04 ; H01L21/66 ; H01L43/10 ; H01L45/00

Abstract:
Material test structures having cantilever portions and methods of forming the same are described herein. As an example, a method of forming a material test structure includes forming a number of electrode portions in a first dielectric material, forming a second dielectric material on the first dielectric material, wherein the second dielectric material includes a first cantilever portion and a second cantilever portion, and forming a test material on the number of electrode portions, the first dielectric material, and the second dielectric material.
Public/Granted literature
- US20150160146A1 MATERIAL TEST STRUCTURE Public/Granted day:2015-06-11
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