- 专利标题： Negative resist composition and pattern forming process
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申请号： US15091092申请日： 2016-04-05
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公开(公告)号： US09645493B2公开(公告)日： 2017-05-09
- 发明人: Daisuke Domon , Keiichi Masunaga , Satoshi Watanabe
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2015-078433 20150407; JP2015-078904 20150408
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/038 ; C08F220/18 ; C07C381/12 ; C08F220/24 ; C08F220/30 ; G03F1/76 ; G03F1/78 ; G03F7/20 ; G03F7/32
摘要：
A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.
公开/授权文献
- US20160299430A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 公开/授权日：2016-10-13
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