Invention Grant
- Patent Title: Method to prevent lateral epitaxial growth in semiconductor devices by performing plasma nitridation process on Fin ends
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Application No.: US15224091Application Date: 2016-07-29
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Publication No.: US09646885B1Publication Date: 2017-05-09
- Inventor: Balasubramanian Pranatharthiharan , Hui Zang
- Applicant: International Business Machines Corporation , GlobalFoundries,Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agent Jeffrey S LaBaw; Steven J Meyers
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/033 ; H01L21/762 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/3105 ; H01L27/11 ; H01L21/8238 ; H01L21/84 ; H01L21/02
Abstract:
A method for preventing epitaxial growth in a semiconductor device is described. The method cuts the fins of a FinFET structure to form a set of exposed fin ends. A plasma nitridation process is performed to the set of exposed fin ends. The plasma nitridation process forms a set of nitride layer covered fin ends. Dielectric material is deposited over the FinFET structure. The dielectric is etched to reveal sidewalls of the fins and the set of nitride layer covered fin ends. The nitride layer prevents epitaxial growth at the set of spacer covered fin ends.
Information query
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