Invention Grant
- Patent Title: Making an efuse
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Application No.: US13916669Application Date: 2013-06-13
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Publication No.: US09646929B2Publication Date: 2017-05-09
- Inventor: Hsueh-Chung Chen , Chiahsun Tseng , Chun-Chen Yeh , Ailian Zhao
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran, Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768

Abstract:
A wafer chip and a method of designing the chip is disclosed. A first fuse is formed having a first critical dimension and a second fuse having a second critical dimension are formed in a layer of the chip. A voltage may be applied to burn out at least one of the first fuse and the second fuse. The first critical dimension of the first fuse may result from applying a first mask to the layer and applying light having a first property to the mask. The second critical dimension of the second fuse may result from applying a second mask to the layer and applying light having a second property to the mask.
Public/Granted literature
- US20140367826A1 MAKING AN EFUSE Public/Granted day:2014-12-18
Information query
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