- 专利标题： Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions
-
申请号： US13879703申请日： 2011-10-10
-
公开(公告)号： US09647151B2公开(公告)日： 2017-05-09
- 发明人: Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
- 申请人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
- 申请人地址： FR Rousset
- 专利权人： NEXCIS
- 当前专利权人： NEXCIS
- 当前专利权人地址： FR Rousset
- 代理机构： Frost Brown Todd LLC
- 优先权： FR1058457 20101018
- 国际申请： PCT/FR2011/052363 WO 20111010
- 国际公布： WO2012/052657 WO 20120426
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264 ; C25D5/10 ; C25D7/06 ; C25D21/12 ; H01L31/032 ; H01L21/02
摘要：
The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.
公开/授权文献
信息查询
IPC分类:
