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公开(公告)号：US09647151B2
公开(公告)日：2017-05-09
申请号：US13879703
申请日：2011-10-10
申请人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
发明人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
IPC分类号： H01L31/0264 , C25D5/10 , C25D7/06 , C25D21/12 , H01L31/032 , H01L21/02
CPC分类号： H01L31/0264 , C25D5/10 , C25D7/0692 , C25D21/12 , H01L21/02521 , H01L31/0322 , Y02E10/541
摘要： The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.
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2.发明申请CHECKING THE STOICHIOMETRY OF I-III-VI LAYERS FOR USE IN PHOTOVOLTAIC USING IMPROVED ELECTROLYSIS CONDITIONS 有权使用改进的电解质条件检查I-III-VI层在光伏中的使用的测量公开(公告)号：US20130206233A1
公开(公告)日：2013-08-15
申请号：US13879703
申请日：2011-10-10
申请人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyantahan , Qiang Huang , Shafaat Ahmed
发明人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyantahan , Qiang Huang , Shafaat Ahmed
IPC分类号： H01L31/0264 , H01L21/02
CPC分类号： H01L31/0264 , C25D5/10 , C25D7/0692 , C25D21/12 , H01L21/02521 , H01L31/0322 , Y02E10/541
摘要： The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.
摘要翻译： 本发明涉及制造用于光伏电池的薄膜形式的I-III-VI化合物，包括以下步骤：a）将由I和/或III元素组成的薄膜结构电沉积到表面上 形成衬底（SUB）的电极; 和b）将至少一种VI元素掺入结构中，以获得I-III-VI化合物。 根据本发明，电沉积步骤包括检查薄膜厚度的均匀性在接收沉积物的基底的整个表面上变化不超过3％。
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3.发明申请INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE 审中-公开I-III-VI2材料层与莫氏体基板之间的界面公开(公告)号：US20130269780A1
公开(公告)日：2013-10-17
申请号：US13995269
申请日：2011-12-20
申请人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
发明人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
摘要翻译： 本发明涉及一种由合金制成并具有光伏特性的薄层制造方法。 根据本发明的方法包括第一步骤：a）在衬底（SUB）上沉积适应层（MO）; b）在所述适配层上沉积包含至少元件I和/或III的至少一层（SEED） 层。 适应层沉积在接近真空条件下，步骤b）包括在与适应层的沉积相同的条件下沉积I和/或III元素的第一层的第一操作，而不暴露于空气中的适配层。
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4.发明申请PRODUCTION OF THIN FILMS HAVING PHOTOVOLTAIC PROPERTIES AND CONTAINING A I-III-VI2-TYPE ALLOY, COMPRISING SUCCESSIVE ELECTRODEPOSITS AND THERMAL POST-TREATMENT 有权生产具有光伏性能和包含I-III-VI2型合金的薄膜，包含连续电沉积和热后处理公开(公告)号：US20120264255A1
公开(公告)日：2012-10-18
申请号：US13500183
申请日：2010-10-06
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , H01L31/18 , Y02E10/541
摘要： The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.
摘要翻译： 本发明涉及生产具有光伏特性的薄膜，其中含有I-III-VI2型合金并通过电解沉积，包括以下步骤：（a）金属元素I和III层的连续沉积; 和（b）通过添加元素VI进行热后处理。 特别地，步骤（a）包括以下操作：（a1）沉积包含以交替方式沉积的元素I和两层元素III的至少两层的多层结构，和（a2）在 添加元素VI以获得I-III合金。
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5.发明授权Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure 有权制备具有光伏特性的薄膜，包括沉积交替的I / III或III / I多层结构并退火所述结构公开(公告)号：US08883547B2
公开(公告)日：2014-11-11
申请号：US13500183
申请日：2010-10-06
IPC分类号： H01L21/00 , H01L31/18 , H01L31/032
CPC分类号： H01L31/0322 , H01L31/18 , Y02E10/541
摘要： The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.
摘要翻译： 本发明涉及生产具有光伏特性的薄膜，其中含有I-III-VI2型合金并通过电解沉积，包括以下步骤：（a）金属元素I和III层的连续沉积; 和（b）通过添加元素VI进行热后处理。 特别地，步骤（a）包括以下操作：（a1）沉积包含以交替方式沉积的元素I和两层元素III的至少两层的多层结构，和（a2）在 添加元素VI以获得I-III合金。
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6.发明授权Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film 有权制备化合物I-III-VI的薄膜的方法，促进III族元素掺入薄膜中公开(公告)号：US07776203B2
公开(公告)日：2010-08-17
申请号：US10540729
申请日：2003-12-23
申请人： Stéphane Taunier , Denis Guimard , Daniel Lincot , Jean-François Guillemoles , Pierre-Philippe Grand
发明人： Stéphane Taunier , Denis Guimard , Daniel Lincot , Jean-François Guillemoles , Pierre-Philippe Grand
IPC分类号： C25C1/24
CPC分类号： C25D3/56 , C25D9/08 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.
摘要翻译： 本发明涉及通过电沉积制备化合物CIGS的薄膜的方法。 根据本发明，向电解浴溶液中加入十二烷基硫酸钠等表面活性化合物，以促进镓在CIGS膜中的引入。
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7.发明申请Method for making thin-film semiconductors based on i-III-vi2 compounds, for photovoltaic applications 有权用于制造基于i-III-vi2 化合物的薄膜半导体的方法，用于光伏应用 公开(公告)号：US20050215079A1
公开(公告)日：2005-09-29
申请号：US10512961
申请日：2003-04-23
申请人： Stephane Taunier , Olivier Kerrec , Michel Mahe , Denis Guimard , Moez Ben-Farah , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand , Pierre Cowache , Jacques Vedel
发明人： Stephane Taunier , Olivier Kerrec , Michel Mahe , Denis Guimard , Moez Ben-Farah , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand , Pierre Cowache , Jacques Vedel
IPC分类号： C25D5/50 , C25D7/00 , H01L31/032 , H01L31/04 , H01L31/18 , H01L21/324 , H01L21/477
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
摘要翻译： 本发明涉及一种制备薄膜CIGS的方法，其中包括：在基底上电化学沉积接近CuInSe 2的化学计量层; 然后用具有足够功率的脉冲从光源快速退火所述层以重结晶CIS。 有利地，电沉积元件被预混合。 因此，在沉积步骤之后，获得能够支持快速退火期间突然的温度升高的均质基质。
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8.发明申请Method of producing thin films of compound I-III-VI,promoting the incorporation of III elements in the film 有权制备化合物I-III-VI的薄膜的方法，促进III族元素掺入薄膜中公开(公告)号：US20060151331A1
公开(公告)日：2006-07-13
申请号：US10540729
申请日：2003-12-23
申请人： Stephane Taunier , Denis Guimard , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand
发明人： Stephane Taunier , Denis Guimard , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand
IPC分类号： C25D9/00
CPC分类号： C25D3/56 , C25D9/08 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.
摘要翻译： 本发明涉及通过电沉积制备化合物CIGS的薄膜的方法。 根据本发明，向电解浴溶液中加入十二烷基硫酸钠等表面活性化合物，以促进镓在CIGS膜中的引入。
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9.发明申请Method for regeneration of an electrolysis bath for the production of a compound I-III-VI sb in thin layers 有权用于生产薄层化合物I-III-VI sb的电解浴的再生方法公开(公告)号：US20060084196A1
公开(公告)日：2006-04-20
申请号：US10540731
申请日：2003-12-05
申请人： Stephane Taunier , Denis Guimard , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand
发明人： Stephane Taunier , Denis Guimard , Daniel Lincot , Jean-Francois Guillemoles , Pierre-Philippe Grand
IPC分类号： H01L21/06
摘要： The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI Y compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).
摘要翻译： 本发明涉及用于在薄层中生产I-III-VI
Y 化合物的电解浴的再生，其中y接近2，VI是包含硒的元素，其中硒再生于 形式Se（IV）和/或加入氧化水以再次氧化浴中的硒以得到形式Se（IV）。 -
10.发明授权Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications 有权基于I-III-VI2化合物制备薄膜半导体的方法，用于光伏应用公开(公告)号：US07026258B2
公开(公告)日：2006-04-11
申请号：US10512961
申请日：2003-04-23
申请人： Stéphane Taunier , Olivier Kerrec , Michel Mahe , Denis Guimard , Moëz Ben-Farah , Daniel Lincot , Jean-François Guillemoles , Pierre-Philippe Grand , Pierre Cowache , Jacques Vedel
发明人： Stéphane Taunier , Olivier Kerrec , Michel Mahe , Denis Guimard , Moëz Ben-Farah , Daniel Lincot , Jean-François Guillemoles , Pierre-Philippe Grand , Pierre Cowache , Jacques Vedel
IPC分类号： H01L21/477
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
摘要翻译： 本发明涉及一种制备薄膜CIGS的方法，其中包括：在基底上电化学沉积接近CuInSe 2的化学计量层; 然后用具有足够功率的脉冲从光源快速退火所述层以重结晶CIS。 有利地，电沉积元件被预混合。 因此，在沉积步骤之后，获得能够支持快速退火期间突然的温度升高的均质基质。
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