Invention Grant
- Patent Title: RF amplification device with power protection during high supply voltage conditions
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Application No.: US15140605Application Date: 2016-04-28
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Publication No.: US09647610B2Publication Date: 2017-05-09
- Inventor: Praveen V. Nadimpalli , David Ngo
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/21 ; H03F3/19 ; H03K3/354 ; G05F1/56 ; H03F1/52

Abstract:
A radio frequency (RF) amplification device comprises an RF amplification circuit, and a dynamic level shifter (DLS) circuit coupled between a supply voltage and the RF amplification circuit. The DLS circuit is configured to provide a first shifted voltage to the RF amplification circuit via a first diode when the supply voltage is above a first threshold voltage level. The DLS circuit is further configured to provide a second shifted voltage to the RF amplification circuit via a first shunt transistor when the supply voltage is below the first threshold voltage level, wherein the supply voltage less the second shifted voltage is less than the supply voltage less the first shifted voltage.
Public/Granted literature
- US20160241200A1 RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS Public/Granted day:2016-08-18
Information query
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