RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS
    2.
    发明申请
    RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS 有权
    在高电压条件下具有电源保护功能的射频放大器件

    公开(公告)号:US20160241200A1

    公开(公告)日:2016-08-18

    申请号:US15140605

    申请日:2016-04-28

    Abstract: A radio frequency (RF) amplification device comprises an RF amplification circuit, and a dynamic level shifter (DLS) circuit coupled between a supply voltage and the RF amplification circuit. The DLS circuit is configured to provide a first shifted voltage to the RF amplification circuit via a first diode when the supply voltage is above a first threshold voltage level. The DLS circuit is further configured to provide a second shifted voltage to the RF amplification circuit via a first shunt transistor when the supply voltage is below the first threshold voltage level, wherein the supply voltage less the second shifted voltage is less than the supply voltage less the first shifted voltage.

    Abstract translation: 射频(RF)放大装置包括RF放大电路和耦合在电源电压和RF放大电路之间的动态电平移位器(DLS)电路。 DLS电路被配置为当电源电压高于第一阈值电压电平时,经由第一二极管向RF放大电路提供第一移位电压。 DLS电路还被配置为当电源电压低于第一阈值电压电平时,经由第一分流晶体管向RF放大电路提供第二移位电压,其中小于第二移位电压的电源电压小于电源电压 第一个移位电压。

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