Invention Grant
- Patent Title: Memory device, comprising at least one element and associated method spintronics
-
Application No.: US14908990Application Date: 2014-08-01
-
Publication No.: US09653136B2Publication Date: 2017-05-16
- Inventor: Vincent Cros , Albert Fert , Joao Sampaio , Pierre Seneor
- Applicant: THALES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) , Université Paris-Sud
- Applicant Address: FR Courbevoie FR Paris FR Orsay
- Assignee: THALES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.),UNIVERSITÉ PARIS-SUD
- Current Assignee: THALES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.),UNIVERSITÉ PARIS-SUD
- Current Assignee Address: FR Courbevoie FR Paris FR Orsay
- Agency: Thompson Coburn LLP
- Priority: FR1301854 20130801
- International Application: PCT/EP2014/066666 WO 20140801
- International Announcement: WO2015/015007 WO 20150205
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C19/08 ; H01L43/10
Abstract:
A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n>1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state n oi is different from said characteristic associated with a state n oj when the states n oi and n oj are two different states among the n states.
Public/Granted literature
- US20160314827A1 A Memory Device, Comprising at Least One Element and Associated Method Spintronics Public/Granted day:2016-10-27
Information query
