Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14777454Application Date: 2013-03-25
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Publication No.: US09653396B2Publication Date: 2017-05-16
- Inventor: Takuo Funaya , Takayuki Igarashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- International Application: PCT/JP2013/058526 WO 20130325
- International Announcement: WO2014/155478 WO 20141002
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/522 ; H01L23/00 ; H01L27/06 ; H01L21/66 ; H01L21/3205 ; H01L49/02 ; H01L23/528 ; H01L23/495
Abstract:
A coil CL1 is formed on a semiconductor substrate SB via a first insulation film, a second insulation film is formed so as to cover the first insulation film and the coil CL1, and a pad PD1 is formed on the second insulation film. A laminated film LF having an opening OP1 from which the pad PD1 is partially exposed is formed on the second insulation film, and a coil CL2 is formed on the laminated insulation film. The coil CL2 is disposed above the coil CL1, and the coil CL2 and the coil CL1 are magnetically coupled to each other. The laminated film LF is composed of a silicon oxide film LF1, a silicon nitride film LF2 thereon, and a resin film LF3 thereon.
Public/Granted literature
- US20160035672A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-02-04
Information query
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