Invention Grant
- Patent Title: Electrostatic discharge (ESD) diode in FinFET technology
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Application No.: US14533187Application Date: 2014-11-05
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Publication No.: US09653448B2Publication Date: 2017-05-16
- Inventor: Xin Yi Zhang , Xiaofeng Fan , Junjun Li
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Lawrence J. Merkel
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78

Abstract:
In an embodiment, an ESD protection circuit is provided in which diodes may be formed between N+ and P+ diffusions within an insulated semiconductor region and in which additional diodes may be formed between adjacent insulated regions of opposite conduction type as well. The diodes may be used in parallel to form an ESD protection circuit, which may have low on resistance and may sink high ESD current per unit area. To support the formation of the ESD protection circuit, each silicon region may have alternating N+ and P+ diffusions, and adjacent silicon regions may have N+ and P+ diffusions alternating in opposite locations. That is a perpendicular drawn between the N+ diffusions of one adjacent region may intersect P+ diffusions in the other adjacent region, and vice versa.
Public/Granted literature
- US20160020203A1 Electrostatic Discharge (ESD) Diode in FinFET Technology Public/Granted day:2016-01-21
Information query
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