Invention Grant
- Patent Title: Metal-oxide-semiconductor field-effect phototransistors based on single crystalline semiconductor thin films
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Application No.: US14879241Application Date: 2015-10-09
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Publication No.: US09653640B2Publication Date: 2017-05-16
- Inventor: Zhenqiang Ma , Jung-Hun Seo
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/113 ; H01L31/101 ; H01L31/0232 ; H01L31/0236 ; H01L31/0224 ; H01L31/0392
Abstract:
MOSFET phototransistors, methods of operating the MOSFET phototransistors and methods of making the MOSFET phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors.
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