Circuit and method for detecting short circuit failure of a switching transistor

Invention Grant

US09658276B2 Circuit and method for detecting short circuit failure of a switching transistor 有权

Patent Title: Circuit and method for detecting short circuit failure of a switching transistor
Application No.: US14743945

Application Date: 2015-06-18
Publication No.: US09658276B2

Publication Date: 2017-05-23
Inventor: Alexander Mednik , Rohit Tirumala , Marc Tan , Simon Krugly
Applicant: Microchip Technology Inc.
Applicant Address: US AZ Chandler
Assignee: Microchip Technology Inc.
Current Assignee: Microchip Technology Inc.
Current Assignee Address: US AZ Chandler
Agency: DLA Piper LLP (US)
Main IPC: G01R31/26
IPC: G01R31/26 ; G01R31/02 ; H02H3/04 ; H02H3/08 ; H02H3/093

Abstract:

A circuit and method are provided detecting a persistent short circuit in a power MOSFET for the purpose of protecting a load from over-current.

Public/Granted literature

Information query

Espacenet

IPC分类:

G	物理
G01	测量；测试
G01R	测量电变量；测量磁变量（指示谐振电路的正确调谐入H03J3/12）
G01R31/00	电性能的测试装置；电故障的探测装置；以所进行的测试在其他位置未提供为特征的电测试装置；在制造过程中测试或测量半导体或固体器件入H01L21/66；线路传输系统的测试入H04B3/46）
G01R31/26	.•单个半导体器件的测试（在制造或处理过程中的测试或测量入H01L 21/66；光伏器件的测试入H02S 50/10）