A memory device includes a magnetic memory unit for storing a burst of data during a burst write operation. Each burst of data includes sequential data units with each data unit being received at a clock cycle, and written during the burst write operation, wherein the burst write operation is performed during multiple clock cycles. Further, the memory device includes a mask register coupled to the magnetic memory unit that generates a write mask during the burst write operation to inhibit or enable data units of write data. Furthermore, the memory device allows a next burst write operation to begin while receiving data units of the burst of data to be written or providing read data.