Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15042914Application Date: 2016-02-12
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Publication No.: US09659888B2Publication Date: 2017-05-23
- Inventor: Makio Okada , Takehiko Maeda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Meginn IP Law Group, PLLC
- Priority: JP2013-182362 20130903
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31

Abstract:
Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.
Public/Granted literature
- US20160163667A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
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