公开(公告)号：US10181450B2

公开(公告)日：2019-01-15

申请号：US15421461

申请日：2017-02-01

Applicant: Renesas Electronics Corporation

Inventor： Seiya Isozaki ,  Takashi Moriyama ,  Takehiko Maeda

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/495

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

公开(公告)号：US11270971B2

公开(公告)日：2022-03-08

申请号：US16576424

申请日：2019-09-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kenji Ikura ,  Hideki Ishii ,  Takehiko Maeda ,  Takeumi Kato

IPC: H01L23/00 ,  H01L23/528

Abstract: A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.

公开(公告)号：US09853005B2

公开(公告)日：2017-12-26

申请号：US14792461

申请日：2015-07-06

Applicant: Renesas Electronics Corporation

Inventor： Takehiko Maeda ,  Akira Yajima ,  Satoshi Itou ,  Fumiyoshi Kawashiro

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01008 ,  H01L2924/01074

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

公开(公告)号：US20160163667A1

公开(公告)日：2016-06-09

申请号：US15042914

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US09299632B2

公开(公告)日：2016-03-29

申请号：US14460223

申请日：2014-08-14

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/31 ,  H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US20150061159A1

公开(公告)日：2015-03-05

申请号：US14460223

申请日：2014-08-14

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US20130127050A1

公开(公告)日：2013-05-23

申请号：US13737494

申请日：2013-01-09

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuichi MIYAGAWA ,  Takehiko Maeda

IPC: H01L23/498

CPC classification number: H01L23/49811 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3135 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29034 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a substrate having a main surface and a back surface opposite to the main surface, a first semiconductor chip having an upper surface and a lower surface opposite to the first surface with a side surface provided therebetween, the first semiconductor chip being mounted on the main surface of the substrate, a plurality of bumps provided between the main surface of the substrate and the lower surface of the first semiconductor chip, a second semiconductor chip having an upper surface and a lower surface opposite to the first surface with a side surface provided therebetween, the second semiconductor chip being mounted on the upper surface of the first semiconductor chip such that the side surface of the second semiconductor chip is positioned outward from the side surface of the first semiconductor chip.

Abstract translation: 半导体器件包括具有主表面和与主表面相对的后表面的衬底，第一半导体芯片，其具有上表面和与第一表面相对的下表面，侧表面设置在其间，第一半导体芯片被安装 在基板的主表面上，设置在基板的主表面和第一半导体芯片的下表面之间的多个凸块，具有与第一表面相对的上表面和下表面的第二半导体芯片， 表面，第二半导体芯片安装在第一半导体芯片的上表面上，使得第二半导体芯片的侧表面位于第一半导体芯片的侧表面的外侧。

公开(公告)号：US09659888B2

公开(公告)日：2017-05-23

申请号：US15042914

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.