公开(公告)号：US09299632B2

公开(公告)日：2016-03-29

申请号：US14460223

申请日：2014-08-14

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/31 ,  H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US20150061159A1

公开(公告)日：2015-03-05

申请号：US14460223

申请日：2014-08-14

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US20160163667A1

公开(公告)日：2016-06-09

申请号：US15042914

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

Abstract translation: 即使当对电极焊盘施加热应力时，也防止电极焊垫移动。 半导体芯片的基板具有矩形平面形状。 半导体芯片具有多个电极焊盘。 与第一开口的中心相比，第一电极焊盘的中心沿着衬底的第一侧的方向定位成更靠近第一侧的端部。 因此，在覆盖有绝缘膜的第一电极焊盘的一部分中，沿着第一侧的方向更靠近第一侧的端部的部分的宽度大于与上述相反的部分的另一宽度 宽度。

公开(公告)号：US09659888B2

公开(公告)日：2017-05-23

申请号：US15042914

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Takehiko Maeda

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/09 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06133 ,  H01L2224/06179 ,  H01L2224/0913 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/29099

Abstract: Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.

公开(公告)号：US08597989B2

公开(公告)日：2013-12-03

申请号：US13726326

申请日：2012-12-24

Applicant: Renesas Electronics Corporation

Inventor： Makio Okada ,  Hidetoshi Kuraya ,  Toshio Tanabe ,  Yoshinori Fujisaki ,  Kotaro Arita

IPC: H01L21/44

CPC classification number: H01L21/56 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752

Abstract: The yield of semiconductor devices is improved. In an upper die of a resin molding die including a pair of the upper die and a lower die, by lengthening the radius of the cross section of an inner peripheral surface of a second corner part facing an injection gate of a cavity more than that of the other corner part, a void contained in a resin in resin injection can be pushed out into an air vent without allowing the void to remain in the second corner part of the cavity. Consequently, the occurrence of the void in the cavity can be prevented and then the occurrence of the appearance defect of the semiconductor device can be prevented.

Abstract translation: 提高了半导体器件的产量。 在包括一对上模和下模的树脂模制模具的上模中，通过使面向腔的注入口的第二角部的内周面的横截面的半径比 另一个角部分，树脂注射中树脂中所含的空隙可以被推出到通气孔中，而不会使空隙残留在空腔的第二角部。 因此，可以防止在空腔中出现空隙，从而可以防止半导体器件出现缺陷。