Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15140837Application Date: 2016-04-28
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Publication No.: US09659977B2Publication Date: 2017-05-23
- Inventor: Daisuke Kubota , Ryo Hatsumi , Masami Jintyou , Takumi Shigenobu , Naoto Goto
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2013-016257 20130130; JP2013-054014 20130315
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/417 ; H01L29/786 ; H01L29/45 ; H01L49/02 ; G02F1/133 ; G02F1/1333 ; G02F1/1335 ; G02F1/1339 ; G02F1/1341 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368 ; G06F3/041 ; G06F3/044 ; H01L29/24

Abstract:
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
Public/Granted literature
- US20160240566A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-08-18
Information query
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