公开(公告)号：US09331108B2

公开(公告)日：2016-05-03

申请号：US14926795

申请日：2015-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US08981374B2

公开(公告)日：2015-03-17

申请号：US14161975

申请日：2014-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Abstract translation: 提供了具有高开口率并且包括能够增加充电容量的电容器的半导体器件。 半导体器件包括：衬底上的晶体管，衬底上的第一透光导电膜，覆盖晶体管的氧化物绝缘膜，并且在第一透光导电膜上具有开口;氧化物绝缘膜上的氮化物绝缘膜 并且与开口部中的第一透光性导电膜接触，与该晶体管连接并具有开口部的凹部的第二透光性导电膜，以及第二透光性导电膜， 传输导电膜被填充。

公开(公告)号：US11036324B2

公开(公告)日：2021-06-15

申请号：US16830795

申请日：2020-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  H01L29/66 ,  G06F3/044

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10777685B2

公开(公告)日：2020-09-15

申请号：US15610784

申请日：2017-06-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto Goto ,  Yasuharu Hosaka ,  Mizuho Yaguchi

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L29/66

Abstract: A transistor with a small footprint is provided. A transistor having high reliability is provided. A transistor is provided over an insulating layer that has a projection. Over the projection, at least a channel formation region of a semiconductor layer is provided. This can reduce the footprint of the transistor. The transistor has a curved structure, which inhibits light that enters from the outside from reaching a channel formation region of the semiconductor layer. Accordingly, deterioration of the transistor due to external light can be reduced, whereby the transistor can have increased reliability. The projection can be obtained by utilizing the internal stress of the layer formed over the insulating layer. Alternatively, the projection can be obtained by placing, under the insulating layer, a structure body for providing the insulating layer with the projection.

公开(公告)号：US10369664B2

公开(公告)日：2019-08-06

申请号：US15707017

申请日：2017-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Seiji Yasumoto ,  Naoto Goto ,  Satoru Idojiri

IPC: B23K26/57 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  G02F1/136

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.

公开(公告)号：US10008609B2

公开(公告)日：2018-06-26

申请号：US15070306

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takahiro Iguchi ,  Naoto Goto ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

公开(公告)号：US09997576B2

公开(公告)日：2018-06-12

申请号：US15456887

申请日：2017-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Kohei Yokoyama ,  Yuki Tamatsukuri ,  Naoto Goto ,  Masami Jintyou ,  Masayoshi Dobashi ,  Masataka Nakada ,  Akihiro Chida ,  Naoyuki Senda

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US09659977B2

公开(公告)日：2017-05-23

申请号：US15140837

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L49/02 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  H01L29/24

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US11954276B2

公开(公告)日：2024-04-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10381486B2

公开(公告)日：2019-08-13

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Naoto Goto

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66 ,  G06F3/044 ,  C23C14/08 ,  C23C14/34

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.